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200 5 -07-21 rev. 2.3 page 1 SPB07N60S5 cool mos? power transistor v ds 600 v r ds(on) 0.6 ? i d 7.3 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance pg-to263 type package ordering code SPB07N60S5 pg-to263 q67040-s4185 marking 07n60s5 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 7.3 4.6 a pulsed drain current, t p limited by t j ma x i d p uls 14.6 avalanche energy, single pulse i d = - a, v dd = 50 v e as 230 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 7.3 a, v dd = 50 v e ar 0.5 avalanche current, repetitive t ar limited by t j ma x i ar 7.3 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 83 w operating and storage temperature t j , t st g -55... +150 c
200 5 -07-21 rev. 2.3 page 2 SPB07N60S5 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 7.3 a, t j = 125 c d v /d t 20 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - 35 62 - soldering temperature, reflow soldering, msl1 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =7.3a - 700 - gate threshold voltage v gs ( th ) i d =350 , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.5 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =4.6a, t j =25c t j =150c - - 0.54 1.46 0.6 - gate input resistance r g f =1mhz, open drain - 19 -
200 5 -07-21 rev. 2.3 page 3 SPB07N60S5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =4.6a - 4 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 970 - pf output capacitance c oss - 370 - reverse transfer capacitance c rss - 10 - effective output capacitance, 3) energy related c o(er) v gs =0v, v ds =0v to 480v - 30 - pf effective output capacitance, 4) time related c o(tr) - 55 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =7.3a, r g =12 - 120 - ns rise time t r - 40 - turn-off delay time t d(off) - 170 255 fall time t f - 20 30 gate charge characteristics gate to source charge q gs v dd =350v, i d =7.3a - 7.5 - nc gate to drain charge q gd - 16.5 - gate charge total q g v dd =350v, i d =7.3a, v gs =0 to 10v - 27 35 gate plateau voltage v (plateau) v dd =350v, i d =7.3a - 8 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 4 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
200 5 -07-21 rev. 2.3 page 4 SPB07N60S5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 7.3 a inverse diode direct current, pulsed i sm - - 14.6 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 750 1275 ns reverse recovery charge q rr - 4.9 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.024 k/w r th2 0.046 r th3 0.085 r th4 0.308 r th5 0.317 r th6 0.112 thermal capacitance c th1 0.00012 ws/k c th2 0.0004578 c th3 0.000645 c th4 0.001867 c th5 0.004795 c th6 0.045 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
200 5 -07-21 rev. 2.3 page 5 SPB07N60S5 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 spp07n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 5 10 15 a 25 i d 7v 8v 9v 10v 12v 20v 4 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 a 12 i d 6v 6.5v 7v 7.5v 8v 8.5v 9v 20v 12v 10v
200 5- 07-21 rev. 2.3 page 6 SPB07N60S5 5 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 a 14 i d 1 1.5 2 m 3 r ds(on) 20v 12v 10v 9v 8.5v 8v 7.5v 7v 6.5v 6v 6 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 4.6 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.4 spp07n60s5 r ds(on) typ 98% 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v 20 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d 25 c 150 c 8 typ. gate charge v gs = f ( q gate ) parameter: i d = 7.3 a pulsed 0 4 8 12 16 20 24 28 32 nc 38 q gate 0 2 4 6 8 10 12 v 16 spp07n60s5 v gs 0.2 v ds max 0.8 v ds max
200 5 -07-21 rev. 2.3 page 7 SPB07N60S5 9 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp07n60s5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 10 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 a 8 i ar t j (start) =125c t j (start) =25c 11 avalanche energy e as = f ( t j ) par.: i d = - a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as 12 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp07n60s5 v (br)dss
200 5 -07-21 rev. 2.3 page 8 SPB07N60S5 13 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 mhz f 0 50 100 150 200 w 300 p ar 14 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 15 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 j 5.5 e oss 16 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds
200 5 -07-21 rev. 2.3 page 9 SPB07N60S5 definition of diodes switching characteristics
200 5 -07-21 rev. 2.3 page 10 SPB07N60S5 pg-to263-3-2, pg-to263-3-5, pg-to263-3-22
200 5 -07-21 rev. 2.3 page 11 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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